IRG4BC20FD
- Mfr.Part #
- IRG4BC20FD
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 600V 16A 60W TO220AB
- Stock
- 20,591
- In Stock :
- 20,591
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Terminal Position :
- Single
- Package / Case :
- TO-220-3
- JEDEC-95 Code :
- TO-220AB
- Turn Off Time-Nom (toff) :
- 610 ns
- Current - Collector Pulsed (Icm) :
- 64A
- Surface Mount :
- No
- Test Condition :
- 480V, 9A, 50 Ω, 15V
- Additional Feature :
- ULTRA FAST SOFT RECOVERY
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power - Max :
- 60W
- Published :
- 2000
- Td (on/off) @ 25°C :
- 43ns/240ns
- Mounting Type :
- Through Hole
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 9A
- Transistor Application :
- POWER CONTROL
- Number of Terminations :
- 3
- Turn On Time :
- 63 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-T3
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Switching Energy :
- 250μJ (on), 640μJ (off)
- Reverse Recovery Time :
- 37ns
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- COLLECTOR
- Qualification Status :
- Not Qualified
- Current - Collector (Ic) (Max) :
- 16A
- Input Type :
- Standard
- RoHS Status :
- Non-RoHS Compliant
- Gate Charge :
- 27nC
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Tube
- Datasheets
- IRG4BC20FD

IRG4BC20FD datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4BC20FD Description
The IRG4BC20FDPBF is an Insulated Gate Bipolar Transistor with an ultrafast soft recovery diode. It is optimized for medium operating frequencies (1 to 5kHz in hard switching, >20kHz in resonant mode). It features a generation 4 IGBT design that provides tighter parameter distribution and higher efficiency than generation 3. The IGBT IRG4BC20FDPBF is co-packaged with HEXFRED? ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED? diodes are optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
IRG4BC20FD Features
-
Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode).
-
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
-
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
-
Industry-standard TO-220AB package
-
Lead-Free
IRG4BC20FD Applications
-
HVAC
-
Lighting
-
Consumer Electronics
-
telephones
-
televisions
-
calculators
-
Power Management
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