IRG4BC20FD

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Mfr.Part #
IRG4BC20FD
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
IGBT 600V 16A 60W TO220AB
Stock
20,591
In Stock :
20,591

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Terminal Position :
Single
Package / Case :
TO-220-3
JEDEC-95 Code :
TO-220AB
Turn Off Time-Nom (toff) :
610 ns
Current - Collector Pulsed (Icm) :
64A
Surface Mount :
No
Test Condition :
480V, 9A, 50 Ω, 15V
Additional Feature :
ULTRA FAST SOFT RECOVERY
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power - Max :
60W
Published :
2000
Td (on/off) @ 25°C :
43ns/240ns
Mounting Type :
Through Hole
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 9A
Transistor Application :
POWER CONTROL
Number of Terminations :
3
Turn On Time :
63 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSFM-T3
Voltage - Collector Emitter Breakdown (Max) :
600V
Switching Energy :
250μJ (on), 640μJ (off)
Reverse Recovery Time :
37ns
Number of Elements :
1
Configuration :
SINGLE WITH BUILT-IN DIODE
Case Connection :
COLLECTOR
Qualification Status :
Not Qualified
Current - Collector (Ic) (Max) :
16A
Input Type :
Standard
RoHS Status :
Non-RoHS Compliant
Gate Charge :
27nC
Operating Temperature :
-55°C~150°C TJ
Polarity/Channel Type :
N-Channel
Packaging :
Tube
Datasheets
IRG4BC20FD
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4BC20FD from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IRG4BC20FD pinout, IRG4BC20FD datasheet PDF, IRG4BC20FD amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4BC20FD ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG4BC20FD


IRG4BC20FD datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4BC20FD Description


The IRG4BC20FDPBF is an Insulated Gate Bipolar Transistor with an ultrafast soft recovery diode. It is optimized for medium operating frequencies (1 to 5kHz in hard switching, >20kHz in resonant mode). It features a generation 4 IGBT design that provides tighter parameter distribution and higher efficiency than generation 3. The IGBT IRG4BC20FDPBF is co-packaged with HEXFRED? ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED? diodes are optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.



IRG4BC20FD Features


  • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode).

  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency   than Generation 3

  • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

  • Industry-standard TO-220AB package

  • Lead-Free


IRG4BC20FD Applications


  • HVAC

  • Lighting

  • Consumer Electronics

  • telephones

  • televisions

  • calculators

  • Power Management


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