IRG4BC15UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Mounting Type :

Through Hole

Turn On Time :

37 ns

Length :

10.5156mm

Number of Elements :

1

Gate-Emitter Voltage-Max :

20V

RoHS Status :

RoHS Compliant

Gate-Emitter Thr Voltage-Max :

6V

REACH SVHC :

No SVHC

Max Power Dissipation :

49W

Rise Time :

20ns

Voltage - Rated DC :

600V

Mount :

Through Hole

Lead Free :

Contains Lead, Lead Free

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

2.4V

Transistor Application :

POWER CONTROL

JEDEC-95 Code :

TO-220AB

Test Condition :

480V, 7.8A, 75 Ω, 15V

Input Type :

Standard

Case Connection :

COLLECTOR

Turn Off Time-Nom (toff) :

400 ns

Switching Energy :

240μJ (on), 260μJ (off)

Operating Temperature :

-55°C~150°C TJ

Gate Charge :

23nC

Number of Terminations :

3

Current - Collector Pulsed (Icm) :

42A

Package / Case :

TO-220-3

Width :

4.699mm

Current Rating :

14A

Collector Emitter Saturation Voltage :

1.95V

Additional Feature :

ULTRA FAST SOFT RECOVERY

Factory Lead Time :

16 Weeks

ECCN Code :

EAR99

Turn-Off Delay Time :

160 ns

Height :

15.24mm

Packaging :

Tube

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 7.8A

Polarity/Channel Type :

N-Channel

Published :

2000

Reverse Recovery Time :

28 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Turn On Delay Time :

17 ns

Collector Emitter Breakdown Voltage :

600V

Radiation Hardening :

No

Number of Pins :

3

Max Collector Current :

14A

Td (on/off) @ 25°C :

17ns/160ns

Power Dissipation :

49W