IRG4BC15UD-SPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

1.95V

Max Power Dissipation :

49W

Turn On Time :

37 ns

Mounting Type :

Surface Mount

Number of Elements :

1

Factory Lead Time :

16 Weeks

Number of Pins :

3

Gate-Emitter Thr Voltage-Max :

6V

Current - Collector Pulsed (Icm) :

42A

Max Collector Current :

14A

Gate Charge :

23nC

Transistor Application :

POWER CONTROL

Switching Energy :

240μJ (on), 260μJ (off)

Rise Time :

20ns

Input Type :

Standard

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

49W

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Polarity/Channel Type :

N-Channel

Terminal Form :

Gull wing

Reverse Recovery Time :

28 ns

Height :

4.83mm

Case Connection :

COLLECTOR

Test Condition :

480V, 7.8A, 75 Ω, 15V

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 7.8A

Td (on/off) @ 25°C :

17ns/160ns

Collector Emitter Voltage (VCEO) :

2.4V

Width :

4.826mm

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2004

Radiation Hardening :

No

Gate-Emitter Voltage-Max :

20V

Peak Reflow Temperature (Cel) :

260

Packaging :

Tube

Mount :

Surface Mount

Turn Off Time-Nom (toff) :

400 ns

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Voltage - Rated DC :

600V

Weight :

260.39037mg

Length :

10.668mm

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

600V

Element Configuration :

Single

Current Rating :

14A

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier