IRG4BC15UD-L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Transistor Application :

POWER CONTROL

Terminal Finish :

Tin/Lead (Sn/Pb)

Mounting Type :

Through Hole

Test Condition :

480V, 7.8A, 75 Ω, 15V

Surface Mount :

No

Switching Energy :

240μJ (on), 260μJ (off)

Peak Reflow Temperature (Cel) :

225

Gate Charge :

23nC

Time@Peak Reflow Temperature-Max (s) :

30

Td (on/off) @ 25°C :

17ns/160ns

Input Type :

Standard

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Polarity/Channel Type :

N-Channel

Turn On Time :

37 ns

Published :

2001

Number of Elements :

1

Number of Terminations :

3

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Voltage - Collector Emitter Breakdown (Max) :

600V

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector (Ic) (Max) :

14A

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e0

JESD-30 Code :

R-PSIP-T3

Qualification Status :

Not Qualified

Power - Max :

49W

Packaging :

Tube

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 7.8A

Turn Off Time-Nom (toff) :

400 ns

Reverse Recovery Time :

28ns

Current - Collector Pulsed (Icm) :

42A