IRG4BC15MDPBF

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Mfr.Part #
IRG4BC15MDPBF
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
IGBT 600V 14A 49W TO220AB
Stock
7,506
In Stock :
7,506

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Max Collector Current :
14A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
Height :
15.24mm
Reverse Recovery Time :
28 ns
Collector Emitter Voltage (VCEO) :
2.3V
Max Operating Temperature :
150°C
Current - Collector (Ic) (Max) :
14A
Weight :
6.000006g
RoHS Status :
RoHS Compliant
Rise Time :
38ns
Switching Energy :
320μJ (on), 1.93mJ (off)
Number of Pins :
3
Gate Charge :
46nC
Input Type :
Standard
Test Condition :
480V, 8.6A, 75Ohm, 15V
Length :
10.5156mm
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Max Power Dissipation :
49W
Voltage - Rated DC :
600V
Collector Emitter Breakdown Voltage :
600V
Collector Emitter Saturation Voltage :
2.3V
Current Rating :
14A
Min Operating Temperature :
-55°C
Width :
4.699mm
Vce(on) (Max) @ Vge, Ic :
2.3V @ 15V, 8.6A
Mount :
Through Hole
Power - Max :
49W
Power Dissipation :
49W
Element Configuration :
Single
Mounting Type :
Through Hole
Current - Collector Pulsed (Icm) :
28A
Radiation Hardening :
No
Published :
2004
Td (on/off) @ 25°C :
21ns/540ns
Lead Free :
Lead Free
Voltage - Collector Emitter Breakdown (Max) :
600V
Datasheets
IRG4BC15MDPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4BC15MDPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IRG4BC15MDPBF pinout, IRG4BC15MDPBF datasheet PDF, IRG4BC15MDPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4BC15MDPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG4BC15MDPBF


IRG4BC15MDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4BC15MDPBF Description

 

IRG4BC15MDPBF transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG4BC15MDPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRG4BC15MDPBF has the common source configuration.

 

 

IRG4BC15MDPBF Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IRG4BC15MDPBF Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display

 


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