IRF7343QTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

N and P-Channel

Continuous Drain Current (ID) :

4.7A

Base Part Number :

IRF7343QPBF

Series :

HEXFET®

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Drain to Source Voltage (Vdss) :

55V

FET Feature :

Standard

Operating Mode :

ENHANCEMENT MODE

Packaging :

Cut Tape (CT)

Max Power Dissipation :

2W

Number of Pins :

8

Width :

3.9878mm

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

50m Ω @ 4.7A, 10V

Gate to Source Voltage (Vgs) :

20V

Min Operating Temperature :

-55°C

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

4.7A 3.4A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Power Dissipation :

2W

Length :

4.9784mm

Max Operating Temperature :

150°C

Height :

1.4986mm

Published :

2010

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Radiation Hardening :

No

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Number of Elements :

2

Vgs(th) (Max) @ Id :

1V @ 250μA