IPI80P04P4L06AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Halogen Free :

Halogen Free

Number of Elements :

1

Power Dissipation-Max :

88W Tc

FET Type :

P-Channel

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0067Ohm

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Drain to Source Voltage (Vdss) :

40V

Input Capacitance (Ciss) (Max) @ Vds :

6580pF @ 25V

Max Dual Supply Voltage :

-40V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.2V @ 150µA

Factory Lead Time :

14 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Turn-Off Delay Time :

61 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2011

Mounting Type :

Through Hole

Mount :

Through Hole

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

17 ns

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 80A, 10V

Vgs (Max) :

+5V, -16V

Series :

Automotive, AEC-Q101, OptiMOS™

Lead Free :

Contains Lead

Fall Time (Typ) :

44 ns

Continuous Drain Current (ID) :

80A

Rise Time :

12ns

Gate Charge (Qg) (Max) @ Vgs :

104nC @ 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

RoHS Status :

RoHS Compliant

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

16V