IPI80N04S3-04

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

136W Tc

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

JESD-30 Code :

R-PSIP-T3

Drain to Source Voltage (Vdss) :

40V

DS Breakdown Voltage-Min :

40V

HTS Code :

8541.29.00.95

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0042Ohm

Series :

OptiMOS™

RoHS Status :

RoHS Compliant

Additional Feature :

ULTRA LOW RESISTANCE

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Pulsed Drain Current-Max (IDM) :

320A

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

4.1m Ω @ 80A, 10V

Published :

2007

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Mounting Type :

Through Hole

Number of Elements :

1

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

290 mJ

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

80A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V