IPI80N04S3-06

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Published :

2007

Reach Compliance Code :

Compliant

Packaging :

Tube

DS Breakdown Voltage-Min :

40V

Avalanche Energy Rating (Eas) :

125 mJ

Drain Current-Max (Abs) (ID) :

80A

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSIP-T3

Series :

OptiMOS™

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Additional Feature :

ULTRA LOW RESISTANCE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Surface Mount :

No

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 80A, 10V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

320A

Input Capacitance (Ciss) (Max) @ Vds :

3250pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 52μA

Power Dissipation-Max :

100W Tc

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0057Ohm

HTS Code :

8541.29.00.95

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

40V