IPI80N04S2-04

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

9.25mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

300W

Avalanche Energy Rating (Eas) :

810 mJ

Element Configuration :

Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

32 ns

Width :

4.4mm

Series :

OptiMOS™

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 25V

Turn-Off Delay Time :

56 ns

Published :

2006

Rise Time :

45ns

Halogen Free :

Halogen Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Turn On Delay Time :

26 ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

300W Tc

Number of Pins :

3

FET Type :

N-Channel

Number of Terminations :

3

Packaging :

Tube

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

40V

Surface Mount :

No

Transistor Element Material :

SILICON

Max Dual Supply Voltage :

40V

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 80A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

80A

Length :

10mm