IPI80N04S2-04
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- Mfr.Part #
- IPI80N04S2-04
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 19,079
- In Stock ：
- 19,079
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 300W
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Additional Feature :
- AVALANCHE RATED
- Element Configuration :
- Single
- Published :
- 2006
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- OptiMOS™
- Transistor Element Material :
- SILICON
- Width :
- 4.4mm
- Turn-Off Delay Time :
- 56 ns
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Surface Mount :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 3.7m Ω @ 80A, 10V
- Height :
- 9.25mm
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 32 ns
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Power Dissipation-Max :
- 300W Tc
- Drain to Source Breakdown Voltage :
- 40V
- Halogen Free :
- Halogen Free
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Length :
- 10mm
- Continuous Drain Current (ID) :
- 80A
- Input Capacitance (Ciss) (Max) @ Vds :
- 5300pF @ 25V
- Turn On Delay Time :
- 26 ns
- Avalanche Energy Rating (Eas) :
- 810 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 45ns
- Max Dual Supply Voltage :
- 40V
- Number of Pins :
- 3
- Datasheets
- IPI80N04S2-04
N-Channel Tube 3.7m Ω @ 80A, 10V ±20V 5300pF @ 25V 170nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI80N04S204AKSA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 810 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5300pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 80A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.It is [56 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 26 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 40V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPI80N04S204AKSA1 Features
the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 56 ns
IPI80N04S204AKSA1 Applications
There are a lot of Infineon Technologies
IPI80N04S204AKSA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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