IPI80N04S3-03

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

40V

Drain-source On Resistance-Max :

0.0035Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

7300pF @ 25V

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 120µA

Packaging :

Tube

Published :

2007

Pulsed Drain Current-Max (IDM) :

320A

JESD-30 Code :

R-PSIP-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Avalanche Energy Rating (Eas) :

526 mJ

Surface Mount :

No

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Power Dissipation-Max :

188W Tc

Additional Feature :

ULTRA LOW RESISTANCE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

40V

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 80A, 10V

Series :

OptiMOS™

FET Type :

N-Channel

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

80A

ECCN Code :

EAR99

HTS Code :

8541.29.00.95

Number of Elements :

1

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V