IPI80N03S4L-04

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 80A, 10V

DS Breakdown Voltage-Min :

30V

Reach Compliance Code :

Compliant

Mounting Type :

Through Hole

Case Connection :

DRAIN

Vgs (Max) :

±16V

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

80A

Additional Feature :

ULTRA LOW RESISTANCE

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Power Dissipation-Max :

94W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2010

Surface Mount :

No

Drain-source On Resistance-Max :

0.0037Ohm

ECCN Code :

EAR99

Packaging :

Tube

Vgs(th) (Max) @ Id :

2.2V @ 45μA

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

95 mJ

JESD-30 Code :

R-PSIP-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

1

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

320A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Series :

OptiMOS™