IPI80N04S204AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

810 mJ

Max Dual Supply Voltage :

40V

FET Type :

N-Channel

Vgs (Max) :

±20V

Factory Lead Time :

14 Weeks

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Published :

2006

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 80A, 10V

Number of Elements :

1

Drain-source On Resistance-Max :

0.0037Ohm

Lead Free :

Contains Lead

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

320A

JESD-30 Code :

R-PSIP-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Halogen Free :

Halogen Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

300W Tc

Packaging :

Tube

Number of Terminations :

3

Series :

OptiMOS™

Continuous Drain Current (ID) :

80A

Additional Feature :

AVALANCHE RATED