IPI80CN10NG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

80m Ω @ 13A, 10V

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

13A

Published :

2007

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

716pF @ 50V

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.08Ohm

DS Breakdown Voltage-Min :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

FET Type :

N-Channel

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Vgs(th) (Max) @ Id :

4V @ 12µA

Pin Count :

3

Vgs (Max) :

±20V

Power Dissipation-Max :

31W Tc

Drain to Source Voltage (Vdss) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Pulsed Drain Current-Max (IDM) :

52A

JESD-30 Code :

R-PSIP-T3

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Reach Compliance Code :

Compliant

Operating Temperature :

-55°C~175°C TJ

Series :

OptiMOS™

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

17 mJ