IPI80N04S2H4AKSA1
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- Mfr.Part #
- IPI80N04S2H4AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A TO262-3
- Stock
- 28,292
- In Stock ：
- 28,292
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 4400pF @ 25V
- Published :
- 2008
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 46 ns
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 300W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Rise Time :
- 63ns
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Series :
- OptiMOS™
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 80A
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 80A, 10V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Turn On Delay Time :
- 23 ns
- Drain to Source Voltage (Vdss) :
- 40V
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 148nC @ 10V
- Fall Time (Typ) :
- 22 ns
- Datasheets
- IPI80N04S2H4AKSA1
N-Channel Tube 4m Ω @ 80A, 10V ±20V 4400pF @ 25V 148nC @ 10V 40V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI80N04S2H4AKSA1 Overview
A device's maximum input capacitance is 4400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 46 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 23 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IPI80N04S2H4AKSA1 Features
a continuous drain current (ID) of 80A
the turn-off delay time is 46 ns
a 40V drain to source voltage (Vdss)
IPI80N04S2H4AKSA1 Applications
There are a lot of Infineon Technologies
IPI80N04S2H4AKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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