IPI80N03S4L-03
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- Mfr.Part #
- IPI80N03S4L-03
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 952
- In Stock ：
- 952
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 30V
- Drain-source On Resistance-Max :
- 0.0027Ohm
- Width :
- 4.52mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Rise Time :
- 9ns
- Avalanche Energy Rating (Eas) :
- 260 mJ
- Vgs(th) (Max) @ Id :
- 2.2V @ 90μA
- JESD-609 Code :
- e3
- Max Dual Supply Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Additional Feature :
- ULTRA LOW RESISTANCE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 2.7m Ω @ 80A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 9750pF @ 25V
- Published :
- 2007
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±16V
- Height :
- 9.45mm
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Gate to Source Voltage (Vgs) :
- 16V
- HTS Code :
- 8541.29.00.95
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tube
- Power Dissipation-Max :
- 136W Tc
- Number of Elements :
- 1
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Factory Lead Time :
- 14 Weeks
- Turn-Off Delay Time :
- 62 ns
- FET Type :
- N-Channel
- Series :
- OptiMOS™
- Continuous Drain Current (ID) :
- 80A
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Halogen Free :
- Halogen Free
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 14 ns
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Length :
- 10.36mm
- Number of Terminations :
- 3
- Power Dissipation :
- 136W
- Fall Time (Typ) :
- 13 ns
- Datasheets
- IPI80N03S4L-03
N-Channel Tube 2.7m Ω @ 80A, 10V ±16V 9750pF @ 25V 140nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI80N03S4L03AKSA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 260 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9750pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 80A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 14 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 16V.Powered by 30V, it supports the maximal dual supply voltage.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
IPI80N03S4L03AKSA1 Features
the avalanche energy rating (Eas) is 260 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 62 ns
IPI80N03S4L03AKSA1 Applications
There are a lot of Infineon Technologies
IPI80N03S4L03AKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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