IPI80N04S2H4AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Reference Standard :

AEC-Q101

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

14 Weeks

RoHS Status :

RoHS Compliant

Number of Elements :

1

Published :

2008

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

80A

Drain-source On Resistance-Max :

0.004ohm

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

148nC @ 10V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 80A, 10V

Pbfree Code :

yes

FET Type :

N-Channel

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Transistor Element Material :

SILICON

Terminal Position :

Single

JESD-30 Code :

R-PSIP-T3

Avalanche Energy Rating (Eas) :

660 mJ

Max Dual Supply Voltage :

40V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Power Dissipation-Max :

300W Tc

Pulsed Drain Current-Max (IDM) :

320A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

OptiMOS™