IPI80P04P4L04AKSA1
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- Mfr.Part #
- IPI80P04P4L04AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 80A TO262-3
- Stock
- 22,279
- In Stock ：
- 22,279
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- FET Type :
- P-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Max Dual Supply Voltage :
- -40V
- Halogen Free :
- Halogen Free
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3800pF @ 25V
- JESD-609 Code :
- e3
- Vgs (Max) :
- +5V, -16V
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 4.7m Ω @ 80A, 10V
- Turn On Delay Time :
- 28 ns
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Packaging :
- Tube
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 16V
- Published :
- 2011
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 119 ns
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Drain-source On Resistance-Max :
- 0.0071Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 176nC @ 10V
- Power Dissipation-Max :
- 125W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 40V
- Continuous Drain Current (ID) :
- 80A
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Factory Lead Time :
- 14 Weeks
- Fall Time (Typ) :
- 65 ns
- Rise Time :
- 13ns
- Number of Elements :
- 1
- Lead Free :
- Contains Lead
- Datasheets
- IPI80P04P4L04AKSA1
P-Channel Tube 4.7m Ω @ 80A, 10V +5V, -16V 3800pF @ 25V 176nC @ 10V 40V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI80P04P4L04AKSA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 60 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3800pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 119 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 28 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 16V to 1.In addition to -40V, it supports dual voltages up to the maximum.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IPI80P04P4L04AKSA1 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 80A
the turn-off delay time is 119 ns
a 40V drain to source voltage (Vdss)
IPI80P04P4L04AKSA1 Applications
There are a lot of Infineon Technologies
IPI80P04P4L04AKSA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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