IPI80P04P407AKSA1
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- Mfr.Part #
- IPI80P04P407AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 80A TO262-3
- Stock
- 43,036
- In Stock ：
- 43,036
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Dual Supply Voltage :
- -40V
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 6085pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 41 ns
- Packaging :
- Tube
- Mount :
- Through Hole
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 15ns
- Drain to Source Voltage (Vdss) :
- 40V
- Continuous Drain Current (ID) :
- 80A
- Terminal Position :
- Single
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- Power Dissipation :
- 88W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Mounting Type :
- Through Hole
- Published :
- 2011
- Halogen Free :
- Halogen Free
- Number of Pins :
- 3
- Power Dissipation-Max :
- 88W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Factory Lead Time :
- 14 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 34 ns
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.0077Ohm
- FET Type :
- P-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Rds On (Max) @ Id, Vgs :
- 7.7m Ω @ 80A, 10V
- Turn On Delay Time :
- 25 ns
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Gate Charge (Qg) (Max) @ Vgs :
- 89nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Lead Free :
- Contains Lead
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Datasheets
- IPI80P04P407AKSA1
P-Channel Tube 7.7m Ω @ 80A, 10V ±20V 6085pF @ 25V 89nC @ 10V 40V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI80P04P407AKSA1 Overview
A device's maximum input capacitance is 6085pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 34 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by -40V, it supports maximum dual supply voltages.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IPI80P04P407AKSA1 Features
a continuous drain current (ID) of 80A
the turn-off delay time is 34 ns
a 40V drain to source voltage (Vdss)
IPI80P04P407AKSA1 Applications
There are a lot of Infineon Technologies
IPI80P04P407AKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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