IPI80P04P405AKSA1
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- Mfr.Part #
- IPI80P04P405AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 80A TO262-3
- Stock
- 12,617
- In Stock ：
- 12,617
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 151nC @ 10V
- Turn-Off Delay Time :
- 73 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 80A
- Power Dissipation-Max :
- 125W Tc
- Drain to Source Voltage (Vdss) :
- 40V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Avalanche Energy Rating (Eas) :
- 64 mJ
- Rise Time :
- 24ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- P-Channel
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 5.2m Ω @ 80A, 10V
- Mount :
- Through Hole
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 10300pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Contains Lead
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Turn On Delay Time :
- 42 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Halogen Free :
- Halogen Free
- Published :
- 2011
- Fall Time (Typ) :
- 65 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Factory Lead Time :
- 14 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Drain-source On Resistance-Max :
- 0.0052Ohm
- Max Dual Supply Voltage :
- -40V
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Datasheets
- IPI80P04P405AKSA1
P-Channel Tube 5.2m Ω @ 80A, 10V ±20V 10300pF @ 25V 151nC @ 10V 40V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI80P04P405AKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 64 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 10300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 73 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 42 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by -40V.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IPI80P04P405AKSA1 Features
the avalanche energy rating (Eas) is 64 mJ
a continuous drain current (ID) of 80A
the turn-off delay time is 73 ns
a 40V drain to source voltage (Vdss)
IPI80P04P405AKSA1 Applications
There are a lot of Infineon Technologies
IPI80P04P405AKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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