IPI80P03P4L07AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 80A, 10V

Series :

OptiMOS™

Power Dissipation-Max :

88W Tc

Input Capacitance (Ciss) (Max) @ Vds :

5700pF @ 25V

Drain-source On Resistance-Max :

0.0072Ohm

Lead Free :

Contains Lead

JESD-609 Code :

e3

Vgs (Max) :

+5V, -16V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Transistor Application :

SWITCHING

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Published :

2008

ECCN Code :

EAR99

Rise Time :

4ns

Turn On Delay Time :

8 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Tin (Sn)

FET Type :

P-Channel

Factory Lead Time :

14 Weeks

Mount :

Through Hole

Continuous Drain Current (ID) :

80A

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2V @ 130µA

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Max Dual Supply Voltage :

-30V

Fall Time (Typ) :

60 ns

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Elements :

1

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

5V

Turn-Off Delay Time :

15 ns

Terminal Position :

Single

Mounting Type :

Through Hole

Halogen Free :

Halogen Free