IPI80P03P4L04AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tube

Vgs(th) (Max) @ Id :

2V @ 253μA

Terminal Position :

Single

Number of Terminations :

3

Transistor Element Material :

SILICON

Additional Feature :

LOGIC LEVEL COMPATIBLE

Series :

OptiMOS™

Pulsed Drain Current-Max (IDM) :

320A

Factory Lead Time :

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

11300pF @ 25V

Power Dissipation-Max :

137W Tc

JESD-30 Code :

R-PSIP-T3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

80A

Avalanche Energy Rating (Eas) :

410 mJ

Terminal Finish :

Tin (Sn)

Published :

2008

Mounting Type :

Through Hole

Vgs (Max) :

+5V, -16V

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 80A, 10V

RoHS Status :

RoHS Compliant

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.007Ohm

DS Breakdown Voltage-Min :

30V

Reach Compliance Code :

not_compliant