IPI80N08S406AKSA1

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Mfr.Part #
IPI80N08S406AKSA1
Manufacturer
Infineon Technologies
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 80V 80A TO262-3
Stock
48,487
In Stock :
48,487

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
5.8m Ω @ 80A, 10V
Transistor Element Material :
SILICON
Halogen Free :
Halogen Free
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.0058ohm
Published :
2013
Lead Free :
Contains Lead
Packaging :
Tube
JESD-30 Code :
R-PSIP-T3
Pbfree Code :
yes
Power Dissipation-Max :
150W Tc
Max Dual Supply Voltage :
80V
Mount :
Through Hole
FET Type :
N-Channel
Vgs (Max) :
±20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
Series :
Automotive, AEC-Q101, OptiMOS™
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
3
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Configuration :
SINGLE WITH BUILT-IN DIODE
Case Connection :
DRAIN
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Vgs(th) (Max) @ Id :
4V @ 90µA
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
Continuous Drain Current (ID) :
80A
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
14 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Pulsed Drain Current-Max (IDM) :
320A
Terminal Position :
Single
Avalanche Energy Rating (Eas) :
270 mJ
Operating Temperature :
-55°C~175°C TJ
Datasheets
IPI80N08S406AKSA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPI80N08S406AKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, IPI80N08S406AKSA1 pinout, IPI80N08S406AKSA1 datasheet PDF, IPI80N08S406AKSA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPI80N08S406AKSA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPI80N08S406AKSA1


N-Channel Tube 5.8m Ω @ 80A, 10V ±20V 4800pF @ 25V 70nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA

IPI80N08S406AKSA1 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 270 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4800pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).Peak drain current is 320A, which is the maximum pulsed drain current.In addition to 80V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IPI80N08S406AKSA1 Features


the avalanche energy rating (Eas) is 270 mJ
a continuous drain current (ID) of 80A
based on its rated peak drain current 320A.


IPI80N08S406AKSA1 Applications


There are a lot of Infineon Technologies
IPI80N08S406AKSA1 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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