IPI80N06S4L07AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Gate to Source Voltage (Vgs) :

16V

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 80A, 10V

Vgs (Max) :

±16V

Width :

4.4mm

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

79W Tc

Halogen Free :

Halogen Free

Pbfree Code :

yes

Power Dissipation :

79W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.2V @ 40μA

Continuous Drain Current (ID) :

80A

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

50 ns

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Mount :

Through Hole

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

5680pF @ 25V

Published :

2009

Max Dual Supply Voltage :

60V

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Packaging :

Tube

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Element Configuration :

Single

Turn On Delay Time :

10 ns

Height :

9.25mm

Drain-source On Resistance-Max :

0.0064Ohm

Number of Terminations :

3

Length :

10mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

OptiMOS™

FET Type :

N-Channel