IPI80N06S4L07AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±16V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

5680pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Drain Current-Max (Abs) (ID) :

80A

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 80A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2009

Vgs(th) (Max) @ Id :

2.2V @ 40μA

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

320A

Terminal Position :

Single

Surface Mount :

No

Drain-source On Resistance-Max :

0.0064Ohm

Power Dissipation-Max :

79W Tc

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain to Source Voltage (Vdss) :

60V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Series :

OptiMOS™

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Number of Terminations :

3

FET Type :

N-Channel

JESD-30 Code :

R-PSIP-T3

Avalanche Energy Rating (Eas) :

71 mJ

Packaging :

Tube

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

60V

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V