IPI80N06S407AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Mount :

Through Hole

Vgs (Max) :

±20V

Published :

2009

Factory Lead Time :

16 Weeks

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Turn On Delay Time :

15 ns

Halogen Free :

Halogen Free

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

71 mJ

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 40μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Series :

Automotive, AEC-Q101, OptiMOS™

Mounting Type :

Through Hole

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Packaging :

Tube

Power Dissipation-Max :

79W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

23 ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain-source On Resistance-Max :

0.0071Ohm

Rise Time :

3ns

Number of Pins :

3

Continuous Drain Current (ID) :

80A

Rds On (Max) @ Id, Vgs :

7.4m Ω @ 80A, 10V

Pbfree Code :

yes

Fall Time (Typ) :

5 ns

Terminal Finish :

Tin (Sn)

Max Dual Supply Voltage :

60V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN