IPI80N06S405AKSA1

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Mfr.Part #
IPI80N06S405AKSA1
Manufacturer
Infineon Technologies
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 60V 80A TO262-3
Stock
37,982
In Stock :
37,982

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Compliant
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Pulsed Drain Current-Max (IDM) :
320A
Avalanche Energy Rating (Eas) :
152 mJ
Packaging :
Tube
Surface Mount :
No
FET Type :
N-Channel
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds :
6500pF @ 25V
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Drain Current-Max (Abs) (ID) :
80A
Drain-source On Resistance-Max :
0.0057Ohm
Operating Temperature :
-55°C~175°C TJ
Vgs(th) (Max) @ Id :
4V @ 60μA
Case Connection :
DRAIN
Drain to Source Voltage (Vdss) :
60V
Gate Charge (Qg) (Max) @ Vgs :
81nC @ 10V
Series :
OptiMOS™
Rds On (Max) @ Id, Vgs :
5.7m Ω @ 80A, 10V
Mounting Type :
Through Hole
Published :
2009
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Vgs (Max) :
±20V
JESD-30 Code :
R-PSIP-T3
Power Dissipation-Max :
107W Tc
Number of Elements :
1
DS Breakdown Voltage-Min :
60V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Datasheets
IPI80N06S405AKSA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPI80N06S405AKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, IPI80N06S405AKSA1 pinout, IPI80N06S405AKSA1 datasheet PDF, IPI80N06S405AKSA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPI80N06S405AKSA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPI80N06S405AKSA1


N-Channel Tube 5.7m Ω @ 80A, 10V ±20V 6500pF @ 25V 81nC @ 10V 60V TO-262-3 Long Leads, I2Pak, TO-262AA

IPI80N06S405AKSA1 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 152 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 80A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 320A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IPI80N06S405AKSA1 Features


the avalanche energy rating (Eas) is 152 mJ
based on its rated peak drain current 320A.
a 60V drain to source voltage (Vdss)


IPI80N06S405AKSA1 Applications


There are a lot of Infineon Technologies
IPI80N06S405AKSA1 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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