IPI80N06S3L-08

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

39 ns

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

7.9m Ω @ 43A, 10V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Pulsed Drain Current-Max (IDM) :

320A

Vgs (Max) :

±16V

Drain-source On Resistance-Max :

0.0079Ohm

Vgs(th) (Max) @ Id :

2.2V @ 55μA

Transistor Element Material :

SILICON

Power Dissipation-Max :

105W Tc

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

6475pF @ 25V

Pin Count :

3

Current Rating :

80A

Power Dissipation :

105W

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

JESD-30 Code :

R-PSIP-T3

Packaging :

Tube

Series :

OptiMOS™

Number of Terminations :

3

Voltage - Rated DC :

55V

FET Type :

N-Channel

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

55V

Terminal Finish :

MATTE TIN

Mount :

Through Hole

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

134nC @ 10V

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Continuous Drain Current (ID) :

80A

Gate to Source Voltage (Vgs) :

16V

Rise Time :

35ns

Element Configuration :

Single

Fall Time (Typ) :

25 ns

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Published :

2007