IPI80N06S3-07

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Continuous Drain Current (ID) :

80A

Drain-source On Resistance-Max :

0.0068Ohm

Qualification Status :

Not Qualified

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Rise Time :

41ns

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 51A, 10V

Published :

2007

Mount :

Through Hole

Voltage - Rated DC :

55V

Input Capacitance (Ciss) (Max) @ Vds :

7768pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Pin Count :

3

Packaging :

Tube

Lead Free :

Lead Free

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

Power Dissipation-Max :

135W Tc

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

55V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Current Rating :

80A

Vgs (Max) :

±20V

Fall Time (Typ) :

33 ns

Vgs(th) (Max) @ Id :

4V @ 80μA

Series :

OptiMOS™

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

34 ns

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSIP-T3

Power Dissipation :

135W