IPI80N06S3-05

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

50ns

Published :

2007

Rds On (Max) @ Id, Vgs :

5.4m Ω @ 63A, 10V

Avalanche Energy Rating (Eas) :

345 mJ

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

JESD-30 Code :

R-PSIP-T3

Mounting Type :

Through Hole

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.0054Ohm

Voltage - Rated DC :

55V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

165W

Turn-Off Delay Time :

46 ns

Qualification Status :

Not Qualified

Fall Time (Typ) :

47 ns

Vgs(th) (Max) @ Id :

4V @ 110μA

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Current Rating :

80A

Input Capacitance (Ciss) (Max) @ Vds :

10760pF @ 25V

Number of Terminations :

3

Transistor Element Material :

SILICON

JESD-609 Code :

e3

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

165W Tc

ECCN Code :

EAR99

Vgs (Max) :

±20V

Element Configuration :

Single

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

320A

Continuous Drain Current (ID) :

80A

Packaging :

Tube

Drain to Source Breakdown Voltage :

55V

RoHS Status :

RoHS Compliant

Mount :

Through Hole