IPI80N06S2L11AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

11 ns

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0147Ohm

Power Dissipation-Max :

158W Tc

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Number of Pins :

3

Turn-Off Delay Time :

46 ns

Vgs(th) (Max) @ Id :

2V @ 93μA

Rds On (Max) @ Id, Vgs :

10.7m Ω @ 40A, 10V

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

2075pF @ 25V

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Pbfree Code :

yes

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

80A

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Max Dual Supply Voltage :

55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Series :

OptiMOS™

Fall Time (Typ) :

13 ns

Radiation Hardening :

No

Halogen Free :

Halogen Free

Published :

2010

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

280 mJ

Number of Terminations :

3

ECCN Code :

EAR99

Rise Time :

32ns

Additional Feature :

LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin (Sn)