IPI80N06S2L05AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2V @ 250μA

Vgs (Max) :

±20V

Max Dual Supply Voltage :

55V

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

90 ns

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 80A, 10V

Transistor Element Material :

SILICON

Mount :

Through Hole

Continuous Drain Current (ID) :

80A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Published :

2006

Pbfree Code :

yes

Power Dissipation-Max :

300W Tc

Series :

OptiMOS™

FET Type :

N-Channel

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Turn On Delay Time :

19 ns

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Turn-Off Delay Time :

67 ns

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Number of Elements :

1

Transistor Application :

SWITCHING

Terminal Position :

Single

Drain-source On Resistance-Max :

0.006Ohm

Avalanche Energy Rating (Eas) :

800 mJ

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

5700pF @ 25V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Rise Time :

93ns

Radiation Hardening :

No