IPI80N06S208AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

8m Ω @ 58A, 10V

Published :

2006

Number of Pins :

3

Number of Elements :

1

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Power Dissipation-Max :

215W Tc

Vgs(th) (Max) @ Id :

4V @ 150μA

Avalanche Energy Rating (Eas) :

450 mJ

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

FET Type :

N-Channel

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Series :

OptiMOS™

Factory Lead Time :

10 Weeks

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Mount :

Through Hole

Max Dual Supply Voltage :

55V

Continuous Drain Current (ID) :

80A

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Pbfree Code :

yes

Fall Time (Typ) :

14 ns

Rise Time :

15ns

Drain-source On Resistance-Max :

0.008Ohm

Packaging :

Tube

Turn-Off Delay Time :

32 ns

Turn On Delay Time :

14 ns

Input Capacitance (Ciss) (Max) @ Vds :

2860pF @ 25V

Lead Free :

Lead Free