IPI80N06S208AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Terminal Position :

Single

Drain-source On Resistance-Max :

0.008Ohm

DS Breakdown Voltage-Min :

55V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Published :

2006

ECCN Code :

EAR99

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

320A

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Drain to Source Voltage (Vdss) :

55V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Number of Terminations :

3

Series :

OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds :

2860pF @ 25V

Power Dissipation-Max :

215W Tc

Vgs (Max) :

±20V

Surface Mount :

No

Avalanche Energy Rating (Eas) :

450 mJ

Vgs(th) (Max) @ Id :

4V @ 150μA

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

8m Ω @ 58A, 10V

Drain Current-Max (Abs) (ID) :

80A

JESD-30 Code :

R-PSIP-T3