IPI80N06S207AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

16 ns

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

36 ns

Mount :

Through Hole

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Drain-source On Resistance-Max :

0.0066Ohm

Max Dual Supply Voltage :

55V

Power Dissipation-Max :

250W Tc

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 180μA

Terminal Position :

Single

Vgs (Max) :

±20V

JESD-609 Code :

e3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

3400pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 68A, 10V

Number of Terminations :

3

Series :

OptiMOS™

Factory Lead Time :

10 Weeks

Number of Elements :

1

Rise Time :

37ns

Published :

2010

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Turn-Off Delay Time :

61 ns

Continuous Drain Current (ID) :

80A