IPI80N06S207AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

61 ns

FET Type :

N-Channel

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Vgs(th) (Max) @ Id :

4V @ 180μA

Continuous Drain Current (ID) :

80A

Terminal Finish :

Tin (Sn)

Published :

2010

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage :

55V

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Number of Pins :

3

Number of Terminations :

3

Power Dissipation-Max :

250W Tc

JESD-609 Code :

e3

Fall Time (Typ) :

36 ns

Number of Elements :

1

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 68A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Turn On Delay Time :

16 ns

Drain-source On Resistance-Max :

0.0066Ohm

Input Capacitance (Ciss) (Max) @ Vds :

3400pF @ 25V

Factory Lead Time :

10 Weeks

ECCN Code :

EAR99

Series :

OptiMOS™

Rise Time :

37ns