IPI80N04S404AKSA1
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- Mfr.Part #
- IPI80N04S404AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A TO262-3
- Stock
- 33,500
- In Stock ：
- 33,500
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Lead Free :
- Contains Lead
- Series :
- OptiMOS™
- Max Dual Supply Voltage :
- 40V
- Rds On (Max) @ Id, Vgs :
- 4.6m Ω @ 80A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Halogen Free :
- Halogen Free
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Continuous Drain Current (ID) :
- 80A
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Turn On Delay Time :
- 10 ns
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3440pF @ 25V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Rise Time :
- 12ns
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2010
- Drain-source On Resistance-Max :
- 0.0046Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Factory Lead Time :
- 16 Weeks
- Power Dissipation-Max :
- 71W Tc
- Turn-Off Delay Time :
- 9 ns
- Vgs(th) (Max) @ Id :
- 4V @ 35μA
- Mount :
- Through Hole
- Datasheets
- IPI80N04S404AKSA1
N-Channel Tube 4.6m Ω @ 80A, 10V ±20V 3440pF @ 25V 43nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI80N04S404AKSA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 100 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3440pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 9 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 40V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPI80N04S404AKSA1 Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 80A
the turn-off delay time is 9 ns
IPI80N04S404AKSA1 Applications
There are a lot of Infineon Technologies
IPI80N04S404AKSA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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