IPI80N04S3H4AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 25V

Max Dual Supply Voltage :

40V

Terminal Finish :

Tin (Sn)

Surface Mount :

No

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Element Material :

SILICON

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 65μA

Series :

OptiMOS™

Number of Pins :

3

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

115W Tc

Continuous Drain Current (ID) :

80A

Terminal Position :

Single

Published :

2008

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Halogen Free :

Halogen Free

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 80A, 10V

Drain-source On Resistance-Max :

0.0048Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Packaging :

Tube

FET Type :

N-Channel