IPI80N04S306AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

320A

Series :

OptiMOS™

Surface Mount :

No

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 80A, 10V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Drain to Source Voltage (Vdss) :

40V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

HTS Code :

8541.29.00.95

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

100W Tc

Transistor Element Material :

SILICON

Number of Terminations :

3

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 52μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

125 mJ

Drain-source On Resistance-Max :

0.0057Ohm

Terminal Position :

Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

40V

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

3250pF @ 25V

Published :

2007

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

80A

Additional Feature :

ULTRA LOW RESISTANCE

JESD-30 Code :

R-PSIP-T3