IPB09N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0151Ohm

Avalanche Energy Rating (Eas) :

75 mJ

Peak Reflow Temperature (Cel) :

260

Series :

OptiMOS™

Published :

2003

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Application :

SWITCHING

Power Dissipation-Max :

63W Tc

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1642pF @ 15V

Terminal Position :

Single

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Voltage - Rated DC :

25V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

4

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Terminations :

2

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Current Rating :

50A

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Continuous Drain Current (ID) :

50A

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Vgs(th) (Max) @ Id :

2V @ 20μA

Rds On (Max) @ Id, Vgs :

8.9m Ω @ 30A, 10V

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

88ns

Number of Elements :

1

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e0

Case Connection :

DRAIN