IPB017N08N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Published :

2013

Packaging :

Tape and Reel (TR)

Rise Time :

36ns

Number of Channels :

1

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Transistor Element Material :

SILICON

Mount :

Surface Mount

Continuous Drain Current (ID) :

177A

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

223nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

16900pF @ 40V

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Contains Lead

Power Dissipation-Max :

375W Tc

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Weight :

3.949996g

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

3V

Mounting Type :

Surface Mount

Turn On Delay Time :

40 ns

Power Dissipation :

375W

Factory Lead Time :

13 Weeks

Fall Time (Typ) :

37 ns

Vgs(th) (Max) @ Id :

3.8V @ 280μA

Case Connection :

DRAIN

Turn-Off Delay Time :

102 ns

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Height :

4.7mm

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 100A, 10V

Pulsed Drain Current-Max (IDM) :

480A

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

not_compliant

Max Dual Supply Voltage :

80V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

80V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Number of Terminations :

2

Max Junction Temperature (Tj) :

175°C

Halogen Free :

Halogen Free

Series :

OptiMOS™