IPB009N03LGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Published :

2008

Additional Feature :

LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Factory Lead Time :

39 Weeks

Vgs (Max) :

±20V

Turn-Off Delay Time :

103 ns

RoHS Status :

ROHS3 Compliant

Number of Pins :

7

Input Capacitance (Ciss) (Max) @ Vds :

25000pF @ 15V

Rise Time :

14ns

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Power Dissipation :

250W

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

OptiMOS™

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

No

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

180A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-263AA

Power Dissipation-Max :

250W Tc

Drain to Source Voltage (Vdss) :

30V

JESD-30 Code :

R-PSSO-G6

Fall Time (Typ) :

22 ns

Gate Charge (Qg) (Max) @ Vgs :

227nC @ 10V

Case Connection :

DRAIN

Mount :

Surface Mount

DS Breakdown Voltage-Min :

30V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

not_compliant

Number of Terminations :

6

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Pin Count :

4

Turn On Delay Time :

26 ns

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

0.95m Ω @ 100A, 10V