IPB015N08N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

83 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

375W Tc

Drain to Source Breakdown Voltage :

80V

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Published :

2013

FET Type :

N-Channel

Fall Time (Typ) :

28 ns

Mounting Type :

Surface Mount

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn On Delay Time :

33 ns

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Height :

4.5mm

Weight :

1.59999g

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

180A

Mount :

Surface Mount

Halogen Free :

Halogen Free

Element Configuration :

Single

Number of Channels :

1

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Factory Lead Time :

13 Weeks

Number of Pins :

7

Rds On (Max) @ Id, Vgs :

1.5m Ω @ 100A, 10V

Series :

OptiMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

222nC @ 10V

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

ECCN Code :

EAR99

Power Dissipation :

375W

JESD-30 Code :

R-PSSO-G6

Rise Time :

32ns

Transistor Application :

SWITCHING

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

3.8V @ 279μA

Max Junction Temperature (Tj) :

175°C

Max Dual Supply Voltage :

80V

Lead Free :

Contains Lead

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

16900pF @ 40V