IPB015N08N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Junction Temperature (Tj) :

175°C

Gate Charge (Qg) (Max) @ Vgs :

222nC @ 10V

Rds On (Max) @ Id, Vgs :

1.5m Ω @ 100A, 10V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3.8V @ 279μA

Lead Free :

Contains Lead

Terminal Form :

Gull wing

ECCN Code :

EAR99

Series :

OptiMOS™

Max Dual Supply Voltage :

80V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

375W

Drain to Source Breakdown Voltage :

80V

Number of Pins :

7

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

FET Type :

N-Channel

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation-Max :

375W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

32ns

Number of Elements :

1

Case Connection :

DRAIN

Turn On Delay Time :

33 ns

Halogen Free :

Halogen Free

Pbfree Code :

yes

Mounting Type :

Surface Mount

Mount :

Surface Mount

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

6

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Number of Channels :

1

JESD-30 Code :

R-PSSO-G6

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

16900pF @ 40V

Height :

4.5mm

Published :

2013

Weight :

1.59999g

Turn-Off Delay Time :

83 ns

Fall Time (Typ) :

28 ns

Factory Lead Time :

13 Weeks

Continuous Drain Current (ID) :

180A