IPB014N06NATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

34A Ta 180A Tc

Rds On (Max) @ Id, Vgs :

1.4m Ω @ 100A, 10V

Published :

2008

Avalanche Energy Rating (Eas) :

420 mJ

REACH SVHC :

No SVHC

Mount :

Surface Mount

JESD-609 Code :

e3

Series :

OptiMOS™

Turn On Delay Time :

22 ns

Vgs(th) (Max) @ Id :

2.8V @ 143μA

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Terminal Position :

Single

HTS Code :

8541.29.00.95

Terminal Finish :

Tin (Sn)

Power Dissipation :

214W

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

6

Drain-source On Resistance-Max :

0.0014Ohm

Drain Current-Max (Abs) (ID) :

34A

Drain to Source Breakdown Voltage :

60V

Power Dissipation-Max :

3W Ta 214W Tc

Transistor Application :

SWITCHING

Turn-Off Delay Time :

47 ns

Pbfree Code :

No

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Lead Free :

Contains Lead

Continuous Drain Current (ID) :

180A

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Case Connection :

DRAIN

Halogen Free :

Halogen Free

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

14 ns

Factory Lead Time :

13 Weeks

FET Type :

N-Channel

Packaging :

Cut Tape (CT)

Input Capacitance (Ciss) (Max) @ Vds :

7800pF @ 30V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Max Dual Supply Voltage :

60V

Number of Pins :

7

JESD-30 Code :

R-PSSO-G6

Rise Time :

18ns

Mounting Type :

Surface Mount

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

106nC @ 10V

Threshold Voltage :

2.8V

Radiation Hardening :

No