IPB014N06NATMA1

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Mfr.Part #
IPB014N06NATMA1
Manufacturer
Infineon Technologies
Package / Case
Datasheet
Download
Description
MOSFET N-CH 60V 34A/180A TO263-7
Stock
244
In Stock :
244

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Pin Count :
3
Case Connection :
DRAIN
Series :
OptiMOS™
Radiation Hardening :
No
Input Capacitance (Ciss) (Max) @ Vds :
7800pF @ 30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
2.8V @ 143μA
Power Dissipation :
214W
Max Dual Supply Voltage :
60V
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~175°C TJ
RoHS Status :
ROHS3 Compliant
Fall Time (Typ) :
14 ns
HTS Code :
8541.29.00.95
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
1.4m Ω @ 100A, 10V
Published :
2008
Terminal Finish :
Tin (Sn)
Mount :
Surface Mount
Drain-source On Resistance-Max :
0.0014Ohm
Lead Free :
Contains Lead
Continuous Drain Current (ID) :
180A
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
REACH SVHC :
No SVHC
FET Type :
N-Channel
Terminal Position :
Single
Terminal Form :
Gull wing
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
6
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
106nC @ 10V
JESD-609 Code :
e3
Number of Pins :
7
Factory Lead Time :
13 Weeks
Pbfree Code :
No
Halogen Free :
Halogen Free
Packaging :
Cut Tape (CT)
Threshold Voltage :
2.8V
Power Dissipation-Max :
3W Ta 214W Tc
Rise Time :
18ns
Drain to Source Breakdown Voltage :
60V
Mounting Type :
Surface Mount
Turn On Delay Time :
22 ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Current - Continuous Drain (Id) @ 25°C :
34A Ta 180A Tc
Drain Current-Max (Abs) (ID) :
34A
Turn-Off Delay Time :
47 ns
JESD-30 Code :
R-PSSO-G6
Vgs (Max) :
±20V
Gate to Source Voltage (Vgs) :
20V
Avalanche Energy Rating (Eas) :
420 mJ
Datasheets
IPB014N06NATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPB014N06NATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:6, Number of Pins:7, Mounting Type:Surface Mount, IPB014N06NATMA1 pinout, IPB014N06NATMA1 datasheet PDF, IPB014N06NATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB014N06NATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPB014N06NATMA1


N-Channel Cut Tape (CT) 1.4m Ω @ 100A, 10V ±20V 7800pF @ 30V 106nC @ 10V TO-263-7, D2Pak (6 Leads + Tab)

IPB014N06NATMA1 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 420 mJ.A device's maximal input capacitance is 7800pF @ 30V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 180A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 34A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 47 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 22 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 60V, it can supply the maximum voltage from two sources.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 2.8V threshold voltage.This device reduces its overall power consumption by using drive voltage (6V 10V).

IPB014N06NATMA1 Features


the avalanche energy rating (Eas) is 420 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 47 ns
a threshold voltage of 2.8V


IPB014N06NATMA1 Applications


There are a lot of Infineon Technologies
IPB014N06NATMA1 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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