IPB015N04NGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

No

Factory Lead Time :

13 Weeks

Terminal Finish :

Tin (Sn)

Series :

OptiMOS™

JESD-30 Code :

R-PSSO-G2

Published :

2008

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

40 ns

FET Type :

N-Channel

Max Dual Supply Voltage :

40V

Halogen Free :

Halogen Free

Lead Free :

Contains Lead

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 20V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

400A

Number of Terminations :

2

Turn-Off Delay Time :

64 ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

250W

Vgs(th) (Max) @ Id :

4V @ 200μA

Rise Time :

10ns

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

865 mJ

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

1.5m Ω @ 100A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Fall Time (Typ) :

13 ns

Pin Count :

4

Continuous Drain Current (ID) :

120A

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Number of Pins :

3

Power Dissipation-Max :

250W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount