IPB017N06N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Pbfree Code :

No

Lead Free :

Contains Lead

Max Dual Supply Voltage :

60V

Reach Compliance Code :

not_compliant

Pin Count :

7

Factory Lead Time :

13 Weeks

Power Dissipation :

250W

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Number of Terminations :

6

Published :

2008

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

250W Tc

Series :

OptiMOS™

Mount :

Surface Mount

Turn-Off Delay Time :

79 ns

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 196µA

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Halogen Free :

Halogen Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

275nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

180A

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

24 ns

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 30V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G6

Number of Pins :

7

Avalanche Energy Rating (Eas) :

634 mJ

ECCN Code :

EAR99

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Turn On Delay Time :

41 ns

Rise Time :

80ns

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 100A, 10V

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED