IPB010N06NATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

4V @ 280μA

Supplier Device Package :

PG-TO263-7

Series :

OptiMOS™

Drain to Source Voltage (Vdss) :

60V

Drain to Source Breakdown Voltage :

60V

Turn-Off Delay Time :

74 ns

Number of Elements :

1

Max Dual Supply Voltage :

60V

Mounting Type :

Surface Mount

Number of Pins :

7

Max Operating Temperature :

175°C

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Power Dissipation :

300W

Packaging :

Cut Tape (CT)

Power Dissipation-Max :

300W Tc

Factory Lead Time :

13 Weeks

Rds On (Max) @ Id, Vgs :

1mOhm @ 100A, 10V

Gate Charge (Qg) (Max) @ Vgs :

208nC @ 10V

Rise Time :

36ns

Lead Free :

Contains Lead

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

23 ns

Input Capacitance (Ciss) (Max) @ Vds :

15000pF @ 30V

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

37 ns

Halogen Free :

Halogen Free

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

180A

Drain to Source Resistance :

800μOhm

Published :

2006

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

45A Ta 180A Tc

Mount :

Surface Mount