IPB011N04NGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 20V

JESD-30 Code :

R-PSSO-G6

Terminal Form :

Gull wing

Turn-Off Delay Time :

63 ns

Rise Time :

10ns

Halogen Free :

Halogen Free

Terminal Finish :

Tin (Sn)

Power Dissipation :

250W

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

13 ns

Vgs (Max) :

±20V

Pin Count :

7

ECCN Code :

EAR99

Turn On Delay Time :

40 ns

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Radiation Hardening :

No

Max Dual Supply Voltage :

40V

Continuous Drain Current (ID) :

180A

Mounting Type :

Surface Mount

Factory Lead Time :

13 Weeks

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Contains Lead

Rds On (Max) @ Id, Vgs :

1.1m Ω @ 100A, 10V

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Number of Pins :

7

Published :

2008

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Power Dissipation-Max :

250W Tc

Terminal Position :

Single

FET Type :

N-Channel

Series :

OptiMOS™

Vgs(th) (Max) @ Id :

4V @ 200μA

Pbfree Code :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V