IPB016N06L3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

131 ns

Terminal Position :

Single

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

634 mJ

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage :

60V

Continuous Drain Current (ID) :

180A

Mount :

Surface Mount

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Halogen Free :

Halogen Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

166nC @ 4.5V

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

35 ns

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

38 ns

Lead Free :

Contains Lead

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Series :

OptiMOS™

Rise Time :

79ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 100A, 10V

Terminal Finish :

Tin (Sn)

Published :

2008

Number of Terminations :

6

Factory Lead Time :

13 Weeks

Power Dissipation :

250W

Power Dissipation-Max :

250W Tc

Pbfree Code :

No

Vgs(th) (Max) @ Id :

2.2V @ 196μA

Number of Pins :

7

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Number of Elements :

1

JESD-30 Code :

R-PSSO-G6

RoHS Status :

ROHS3 Compliant

Additional Feature :

LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

28000pF @ 30V

Pin Count :

4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED