IPB017N10N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

15600pF @ 50V

Number of Terminations :

6

Turn-Off Delay Time :

80 ns

ECCN Code :

EAR99

Factory Lead Time :

13 Weeks

Turn On Delay Time :

33 ns

Weight :

1.59999g

Fall Time (Typ) :

27 ns

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3.8V @ 279μA

Power Dissipation-Max :

375W Tc

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

Number of Channels :

1

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Max Junction Temperature (Tj) :

175°C

Case Connection :

DRAIN

Series :

OptiMOS™

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

273A

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 100A, 10V

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

RoHS Status :

ROHS3 Compliant

Number of Pins :

7

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Element Configuration :

Single

Drain to Source Breakdown Voltage :

100V

Power Dissipation :

375W

Published :

2004

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

4.5mm

Max Dual Supply Voltage :

100V

JESD-30 Code :

R-PSSO-G6

Operating Temperature :

-55°C~175°C TJ

Rise Time :

23ns

Number of Elements :

1