IPB017N10N5ATMA1
- Mfr.Part #
- IPB017N10N5ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 180A TO263-7
- Stock
- 17,941
- In Stock :
- 17,941
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 375W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 273A
- Turn-Off Delay Time :
- 80 ns
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 15600pF @ 50V
- Max Junction Temperature (Tj) :
- 175°C
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Height :
- 4.5mm
- ECCN Code :
- EAR99
- Lead Free :
- Contains Lead
- Number of Pins :
- 7
- Series :
- OptiMOS™
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Reach Compliance Code :
- not_compliant
- Max Dual Supply Voltage :
- 100V
- Rds On (Max) @ Id, Vgs :
- 1.7m Ω @ 100A, 10V
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSSO-G6
- Number of Terminations :
- 6
- Number of Elements :
- 1
- Power Dissipation :
- 375W
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2004
- Weight :
- 1.59999g
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 13 Weeks
- Fall Time (Typ) :
- 27 ns
- Vgs(th) (Max) @ Id :
- 3.8V @ 279μA
- Halogen Free :
- Halogen Free
- Gate Charge (Qg) (Max) @ Vgs :
- 210nC @ 10V
- Turn On Delay Time :
- 33 ns
- Drain to Source Breakdown Voltage :
- 100V
- Rise Time :
- 23ns
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1
- Mount :
- Surface Mount
- Datasheets
- IPB017N10N5ATMA1
IPB017N10N5ATMA1 Documents

N-Channel Tape & Reel (TR) 1.7m Ω @ 100A, 10V ±20V 15600pF @ 50V 210nC @ 10V TO-263-7, D2Pak (6 Leads + Tab)
IPB017N10N5ATMA1 Description
IPB017N10N5ATMA1 is an N-channel Power MOSFET from the manufacturer of Infineon Technologies with a voltage of 100V. The operating temperature of IPB017N10N5ATMA1 is -55°C~175°C TJ and its maximum power dissipation is 375W Tc. IPB017N10N5ATMA1 has 7 pins and it is available in Tape & Reel (TR) packaging way. The FET Type of IPB017N10N5ATMA1 is N-Channel and its Mounting Type is Surface Mount.
IPB017N10N5ATMA1 Features
-
Ideal for high-frequency switching and sync. rec.
-
Excellent gate charge xRDS (on)product(FOM)
-
Very low on-resistance RDS(on)
-
N-channel, normal level
-
100% avalanche tested
-
Pb-free plating; RoHS compliant
-
Halogen-freeaccordingtoIEC61249-2-21
IPB017N10N5ATMA1 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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