IPB017N10N5ATMA1

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Mfr.Part #
IPB017N10N5ATMA1
Manufacturer
Infineon Technologies
Package / Case
Datasheet
Download
Description
MOSFET N-CH 100V 180A TO263-7
Stock
17,941
In Stock :
17,941

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
180A Tc
Number of Terminations :
6
Factory Lead Time :
13 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~175°C TJ
Mounting Type :
Surface Mount
Halogen Free :
Halogen Free
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Mount :
Surface Mount
Number of Channels :
1
Transistor Element Material :
SILICON
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Terminal Finish :
Tin (Sn)
Lead Free :
Contains Lead
Power Dissipation :
375W
Turn-Off Delay Time :
80 ns
Vgs (Max) :
±20V
Gate Charge (Qg) (Max) @ Vgs :
210nC @ 10V
Terminal Form :
Gull wing
Rise Time :
23ns
Max Junction Temperature (Tj) :
175°C
Series :
OptiMOS™
Packaging :
Tape and Reel (TR)
Max Dual Supply Voltage :
100V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Weight :
1.59999g
Turn On Delay Time :
33 ns
Rds On (Max) @ Id, Vgs :
1.7m Ω @ 100A, 10V
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
20V
Number of Pins :
7
Fall Time (Typ) :
27 ns
JESD-30 Code :
R-PSSO-G6
Height :
4.5mm
Reach Compliance Code :
not_compliant
Power Dissipation-Max :
375W Tc
Input Capacitance (Ciss) (Max) @ Vds :
15600pF @ 50V
Published :
2004
Continuous Drain Current (ID) :
273A
Transistor Application :
SWITCHING
Drain to Source Breakdown Voltage :
100V
Vgs(th) (Max) @ Id :
3.8V @ 279μA
JESD-609 Code :
e3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPB017N10N5ATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Number of Channels:1, Number of Pins:7, IPB017N10N5ATMA1 pinout, IPB017N10N5ATMA1 datasheet PDF, IPB017N10N5ATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB017N10N5ATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPB017N10N5ATMA1


N-Channel Tape & Reel (TR) 1.7m Ω @ 100A, 10V ±20V 15600pF @ 50V 210nC @ 10V TO-263-7, D2Pak (6 Leads + Tab)

IPB017N10N5ATMA1 Description


IPB017N10N5ATMA1 is an N-channel Power MOSFET from the manufacturer of Infineon Technologies with a voltage of 100V. The operating temperature of IPB017N10N5ATMA1 is -55°C~175°C TJ and its maximum power dissipation is 375W Tc. IPB017N10N5ATMA1 has 7 pins and it is available in Tape & Reel (TR) packaging way. The FET Type of IPB017N10N5ATMA1 is N-Channel and its Mounting Type is Surface Mount.



IPB017N10N5ATMA1 Features


  • Ideal for high-frequency switching and sync. rec.

  • Excellent gate charge xRDS (on)product(FOM)

  • Very low on-resistance RDS(on)

  • N-channel, normal level

  • 100% avalanche tested

  • Pb-free plating; RoHS compliant

  • Halogen-freeaccordingtoIEC61249-2-21



IPB017N10N5ATMA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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