IPB017N10N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

33 ns

Published :

2004

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Number of Elements :

1

JESD-609 Code :

e3

Number of Terminations :

6

Series :

OptiMOS™

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3.8V @ 279μA

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Max Junction Temperature (Tj) :

175°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 100A, 10V

Mounting Type :

Surface Mount

Max Dual Supply Voltage :

100V

Weight :

1.59999g

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

27 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Contains Lead

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Power Dissipation-Max :

375W Tc

JESD-30 Code :

R-PSSO-G6

Continuous Drain Current (ID) :

273A

Power Dissipation :

375W

Factory Lead Time :

13 Weeks

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Rise Time :

23ns

Height :

4.5mm

Number of Pins :

7

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

80 ns

Transistor Application :

SWITCHING

Number of Channels :

1

Drain to Source Breakdown Voltage :

100V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

15600pF @ 50V