IPB017N10N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

6

Max Dual Supply Voltage :

100V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

Number of Elements :

1

Weight :

1.59999g

Input Capacitance (Ciss) (Max) @ Vds :

15600pF @ 50V

JESD-609 Code :

e3

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G6

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 100A, 10V

Power Dissipation-Max :

375W Tc

Max Junction Temperature (Tj) :

175°C

Turn On Delay Time :

33 ns

Vgs(th) (Max) @ Id :

3.8V @ 279μA

Published :

2004

Series :

OptiMOS™

Mounting Type :

Surface Mount

Fall Time (Typ) :

27 ns

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Continuous Drain Current (ID) :

273A

Height :

4.5mm

Mount :

Surface Mount

Rise Time :

23ns

Drain to Source Breakdown Voltage :

100V

Case Connection :

DRAIN

Number of Channels :

1

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Number of Pins :

7

Factory Lead Time :

13 Weeks

Reach Compliance Code :

not_compliant

Power Dissipation :

375W

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Turn-Off Delay Time :

80 ns

Packaging :

Tape and Reel (TR)

Lead Free :

Contains Lead

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V