IPB097N08N3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

100W Tc

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

70A

Transistor Element Material :

SILICON

Surface Mount :

yes

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

80V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Series :

OptiMOS™

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Published :

2011

Pin Count :

4

DS Breakdown Voltage-Min :

80V

Input Capacitance (Ciss) (Max) @ Vds :

2410pF @ 40V

Terminal Finish :

MATTE TIN

Avalanche Energy Rating (Eas) :

90 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

280A

Peak Reflow Temperature (Cel) :

260

Reach Compliance Code :

Compliant

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

3.5V @ 46µA

Number of Terminations :

2

Drain-source On Resistance-Max :

0.0097Ohm

Current - Continuous Drain (Id) @ 25°C :

70A Tc

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

9.7m Ω @ 46A, 10V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount